Efficiency limiting processes in 1.55 μm InAs/InP-based quantum dots lasers

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DOIResolve DOI: http://doi.org/10.1063/1.3504253
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TypeArticle
Journal titleApplied Physics Letters
Volume97
Issue16
Pages161104-1161104-3; # of pages: 3
AbstractThe threshold current density, Jth, and its radiative component, Jrad, in 1.55 um InAs/InP (100) quantum dot lasers are measured as a function of temperature and hydrostatic pressure. We find that Jrad is relatively temperature insensitive. However, Jth increases significantly with temperature leading to a characteristic temperature T0=72 K over the range 220–290 K. Nonradiative recombination accounts for up to 94% of Jth at T=293 K. Jth decreases with increasing pressure by 35% over 8 kbar causing an increase in T0 from 72 to 88 K. The results indicate that nonradiative Auger recombination determines temperature behavior of these devices and T0 value.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number17401049
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Record identifierd016e629-f80e-4c2b-9e27-2ca6365dac7e
Record created2011-03-26
Record modified2016-05-09
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