Photo detectors for multi-spectral sensing

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Proceedings titleProceedings of the IEEE Conference on Nanotechnology
Conference2011 11th IEEE International Conference on Nanotechnology, NANO 2011, 15 August 2011 through 19 August 2011, Portland, OR
Article number6144295
Pages286291; # of pages: 6
SubjectActive regions; Applied bias; Bias polarity; Bound state; Detectivity; Dual Band; Forward bias; InAs/GaAs quantum rings; Infrared photodetector; InP; Interband and intraband transitions; Intersubband transitions; Multi-spectral; Multiband; Peak responsivity; Photo detection; Photoconductive detectors; Photocurrent generations; Photoexcited carriers; Quantum dot infrared photodetector; Quantum ring; Specific detectivity; Spectral response; Wavelength band; Infrared detectors; Nanorings; Nanotechnology; Quantum well infrared photodetectors; Separation; Detectors
AbstractDevice concepts of quantum well, dot, and ring for multi-band photodetection are presented in this paper. Results on a preliminary GaAs-based npn-Quantum Well Infrared Photodetector (QWIP) show two combinations of wavelength bands which can be selected using the applied bias. An InP based npn-QWIP structure is proposed to eliminate the cross talk between the bands. As a separate approach, a three band architecture is proposed to obtain response in three bands by combining split-off, interband and intraband transitions which are all bias selectable. Furthermore, in this paper, a dual band Superlattice Quantum Dot Infrared Photodetector (SL-QDIP), providing bias-selectability of the response peaks, is demonstrated. The active region of this detector, consists of two quantum dot super-lattices (SL) which were separated by a graded barrier, enabling photocurrent generation in only one super-lattice for a given bias polarity. Two different response bands, one consisting of three peaks at 4.4, 7.4 and 11 μm, were observed up to 120 K for reverse and forward biases, respectively. Additionally, the intersubband transitions in InAs/GaAs quantum rings have been studied. Quantum ring based photoconductive detectors with multiple quantum ring layers in the active region exhibit dark currents of ∼10 8 A/cm 2 at a bias of 2 V at 4.2 K. The rings have a single bound state and emission of photoexcited carriers gives rise to a spectral response peaking at 1.82 THz at 5.2 K. This detector exhibits a peak responsivity of 25 A/W and specific detectivity D* of 10 16 Jones under 1 V bias at 5.2 K. The detectivity at 10 K, is measured ∼3 × 10 15 Jones. © 2011 IEEE.
Publication date
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21271167
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Record identifierd0222b8d-2be3-48ff-8a51-6fe4b92ef384
Record created2014-03-24
Record modified2016-05-09
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