A comparison between RF MEMS switches and semiconductor switches

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TypeArticle
Journal titleCanadian Journal of Electrical and Computer Engineering
Volume27
Issue1
Pages3339; # of pages: 7
AbstractThis paper addresses the fundamentals of RF switches, providing a comparison between semiconductor and RF microelectromechanical systems (MEMS) switches. The basis of comparison is introduced by defining a figure of merit that is a function of the off-state capacitance and the on-state resistance. A simple transmission-line model is presented to illustrate the impact of the switch off-state capacitance on the switch isolation and frequency range of operation. The figure-of-merit analysis given in this paper demonstrates that RF MEMS switches have superior insertion loss and isolation performance compared to MESFET and p-i-n diode switches. The paper also addresses several other design considerations besides insertion loss and isolation for selecting the right RF switch. A discussion is included on the potential use of RF MEMS switches in satellite and wireless applications.
Publication date
Linkhttp://ieeexplore.ieee.org/iel5/10085/32318/01509004.pdf
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number12743969
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Record identifierd04b4a4c-8e6a-401f-88e3-3cbd5641adcb
Record created2009-10-27
Record modified2017-02-21
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