GaAs-based near-infrared up-conversion device fabricated by wafer fusion

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DOIResolve DOI: http://doi.org/10.1049/el.2010.3543
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TypeArticle
Journal titleElectronics Letters
ISSN0013-5194
Volume47
Issue6
Pages393395; # of pages: 3
SubjectGaAs/AlGaAs; Near infra red; P-i-n photodetectors; Room temperature; Up-conversion; Wafer fusion; Gallium alloys; Gallium arsenide; Light emitting diodes; Optoelectronic devices; Semiconducting gallium; Infrared devices
AbstractReported for the first time is a full GaAs-based room-temperature near-infrared (NIR) up-conversion device fabricated by wafer-fusing a GaNAsSb/GaAs pin photodetector (PD) with a GaAs/AlGaAs light-emitting diode (LED). NIR photons with wavelengths in the range 1.3-1.6m were up-converted to 0.87m. © 2011 The Institution of Engineering and Technology.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21271208
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Record identifierd093a160-588e-4229-ba9a-50d1821f5d6a
Record created2014-03-24
Record modified2016-05-09
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