InAs self-assembled quantum-dot lasers grown on 100 InP

DOIResolve DOI: http://doi.org/10.1109/ICIPRM.2002.1014493
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Proceedings title14th Indium Phosphide and Related Materials Conference, IPRM : conference proceedings
Conference14th Indium Phosphide and Related Materials Conference : IPRM, 12-16 May 2002, Stockholm, Sweden
ISBN0780373200
Pages573576; # of pages: 4
AbstractQuantum dot lasers containing five stacked layers of InAs quantum dots (QDs) embedded in quaternary InGaAsP are grown on [100] InP substrates. The QD ensemble has a density of 1.5 × 1010 cm-2 and emits light at ∼1.6 μm at 77 K. Lasing wavelength and threshold current density can be shifted by changing the cavity length of the laser diode and the latter reaches a value as low as 49 A/cm2 at 77 K for a gate size of 2000 μm × 150 μm. Temperature dependence of the threshold current is observed implying the presence of thermionic emission increasing with temperature.
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12346363
Export citationExport as RIS
Report a correctionReport a correction
Record identifierd09674a4-0593-4f24-88cc-b9a32ad50d52
Record created2009-09-17
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)
Date modified: