Controlled growth of silicon oxide nanowires from a patterned reagent

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DOIResolve DOI: http://doi.org/10.1021/jp0675476
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TypeArticle
Journal titleThe Journal of Physical Chemistry C
ISSN1932-7447
Volume111
Issue5
Pages18651867; # of pages: 3
AbstractA new process to fabricate silicon oxide nanowires (NWs) from a patterned reagent is reported. Arrays of NWs grow on patterned nanodots containing exposed hydrogen silsesquioxane (HSQ)/Fe-SiO2 nanocomposites during annealing at 900 C. The NWs were seeded by metallic iron nanoparticles, and the resulting microstructure and morphology of the NWs is directly related to the size of the individual iron nanoparticles. The growth process could be dominated by a solid-state transformation mechanism in which iron nanoparticles, originally embedded in a SiO2 matrix, diffuse to the surface and act as nucleation sites, the exposed HSQ being the source for the growing NWs.
Publication date
AffiliationNational Research Council Canada; National Institute for Nanotechnology
Peer reviewedNo
Identifier2107415x
NPARC number12338694
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Record identifierd0988f24-28d3-4629-807c-8f3e59d9e678
Record created2009-09-10
Record modified2016-05-09
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