Selection and Jump Rules in Electronic Raman Scattering from GaAs/AlxGa1-xAs Artifical Atoms

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.71.241311
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TypeArticle
Journal titlePhysical review. B, Condensed matter and materials physics
Volume71
Issue24
Pages241311241314; # of pages: 4
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Institute for Research in Construction
Peer reviewedNo
NPARC number12744864
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Record identifierd1bc0acb-88ee-45a6-9b5c-f3b294b5caed
Record created2009-10-27
Record modified2016-05-09
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