A Study of Nitrogen Incorporation during the Oxidation of Si(100) in N[sub 2]O at High Temperatures

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DOIResolve DOI: http://doi.org/10.1149/1.1836412
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TypeArticle
Journal titleJournal of The Electrochemical Society
Volume143
Issue1
Pages221228; # of pages: 8
Subjectnitrogen compounds; oxidation; oxygen compounds; quartz; silicon; surface treatment; temperature
AbstractThe oxidation of Si(100) in N2O has been studied at temperatures in the range from 950 to 1200°C using secondary ion mass spectroscopy, Auger electron spectroscopy, and x-ray photoelectron spectroscopy. During oxidation N became incorporated into the oxide film, the amount increasing with increasing temperature to 1100°C and then falling to a lower value at 1200°C. The N was concentrated as a thin N-rich layer near the SiO2-Si interface inhibiting the influx of oxidant, leading to a reduction in the extent of oxidation compared with that in pure O2. The oxidant species is believed to be NO, which is stable under the conditions of the experiments. The N-rich phase was shown to have a composition of Si3N4 surmounted by N-rich oxynitride.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12333582
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Record identifierd4563654-b75f-46ae-9024-f355c296b102
Record created2009-09-10
Record modified2016-05-09
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