A Novel Program-Erasable High-k AlN-Si MIS Capacitor

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DOIResolve DOI: http://doi.org/10.1109/LED.2004.842100
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TypeArticle
Journal titleIEEE Electron Device Letters
Volume26
Issue3
Pages148150; # of pages: 3
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744213
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Record identifierd4ccef81-09d3-4022-bdab-27f0985fadcb
Record created2009-10-27
Record modified2016-05-09
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