Interface structure of Ge/Si superlattices determined by X-Ray absorption fine structure

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DOIResolve DOI: http://doi.org/10.1557/PROC-220-253
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TypeArticle
Journal titleMRS Proceedings
ISSN1946-4274
Volume220
AbstractWe illustrate the usefulness of the Extended X-ray Absorption Fine Structure (EXAFS) technique to determine the amount of interface mixing and strain condition in the study of (SimGen)p short-period superlattices. It is found that for n < 4, the number of Ge and Si nearest neighbours to Ge atoms is consistent with ∼25% interfacial mixing and that the Ge-Ge bond length corresponds to that of coherently strained Ge. The Si-Ge bond length is shorter, close to that of a strained Si0.25Ge0.75 alloy. For n > 4, the Ge-Ge bond length and the number of Si-Ge nearest neighbours increase significantly consistent with partial relaxation and interdiffusion. Raman scattering spectroscopy and x-ray reflectometry measurements are also presented and are consistent with the conclusions of the EXAFS analysis.
Publication date
PublisherCambridge University Press
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number23001770
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Record identifierd5991414-c625-4b87-b871-77fff7517bde
Record created2017-03-31
Record modified2017-03-31
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