Activationless charge transport across 4.5 to 22 nm in molecular electronic junctions

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DOIResolve DOI: http://doi.org/10.1073/pnas.1221643110
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TypeArticle
Journal titleProceedings of the National Academy of Sciences of the United States of America
ISSN0027-8424
Volume110
Issue14
Pages53265330; # of pages: 5
Subjectcharge transport; electric field; electricity; high temperature; ionization; semiconductor; Carbon; Electronics; Hot Temperature; Ion Exchange; Nanotechnology; Quantum Theory; Semiconductors
AbstractIn this work, we bridge the gap between short-range tunneling in molecular junctions and activated hopping in bulk organic films, and greatly extend the distance range of charge transport in molecular electronic devices. Three distinct transport mechanisms were observed for 4.5-22-nm-thick oligo(thiophene) layers between carbon contacts, with tunneling operative when d< 8 nm, activated hoppingwhen d> 16nmfor high temperatures and lowbias, and a third mechanism consistent with field-induced ionization of highest occupiedmolecular orbitals or interface states to generate charge carriers when d = 8-22 nm. Transport in the 8-22-nm range is weakly temperature dependent, with a field-dependent activation barrier that becomes negligible at moderate bias. We thus report here a unique, activationless transport mechanism, operative over 8-22-nm distanceswithout involving hopping,which severely limits carriermobility and device lifetime in organic semiconductors. Charge transport in molecular electronic junctions can thus be effective for transport distances significantly greater than the 1-5 nm associated with quantum-mechanical tunneling.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); Security and Disruptive Technologies
Peer reviewedYes
NPARC number21271863
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Record identifierd671032b-d2e8-4b82-9133-0b155596f291
Record created2014-04-24
Record modified2016-05-09
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