Progress in the growth and characterization of Ge quantum dots and islands

DOIResolve DOI:
AuthorSearch for: ; Search for: ; Search for:
Proceedings titleGroup-IV semiconductor nanostructures: symposium held November 29-December 2, 2004, Boston, Massachusetts, U.S.A.
Series titleMaterials Research Society Symposia Proceedings; no. 832
Conference2004 MRS Fall Meeting - Symposium F – Group IV Semiconductor Nanostructures, November 29-December 2, 2004, Boston, Massachusetts, USA
Article numberF5.1
Pages93104; # of pages: 12
AbstractWe review progress in the growth of Si1-xGex islands and Ge dots on (001) Si. We discuss the evolution of the island morphology with Si1-xGex coverage, and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural, and optical properties of Si1-xGex islands and review recent progress in the determination of their composition and strain distribution. We discuss various approaches currently being investigated to engineer Si1-xGex quantum dots and in particular control their size, density and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence nucleation and growth of Ge islands.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences; NRC Institute for National Measurement Standards
Peer reviewedYes
NRC number1386
NPARC number12346434
Export citationExport as RIS
Report a correctionReport a correction
Record identifierd68264d1-295c-4dfa-aa85-b6b160e30613
Record created2009-09-17
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)