Comparison of the gain recovery times in low dimensional semiconductor amplifiers at 1.55 μm

DOIResolve DOI: http://doi.org/10.1109/LEOS.2006.279055
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TypeArticle
Proceedings title2006 IEEE LEOS Annual Meeting Conference Proceedings
Conference2006 IEEE LEOS Annual Meeting, October 29-November 2, 2006, Montreal, QC, Canada
ISBN0-7803-9556-5
0-7803-9555-7
Pages276277
AbstractWe compare experimentally the gain recovery times of quantum dot, quantum dash, and quantum well amplifiers based on InP and operating at 1.55mum. The QD device gives the shortest recovery time of ~15 ps
Publication date
PublisherIEEE
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number23001722
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Record identifierd6d3c77f-77f3-4764-a4e7-e4fd1bb2f611
Record created2017-03-21
Record modified2017-03-21
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