Phonon-resolved and broad photoluminescence in strained Si1-xGex alloy MBE layers

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DOIResolve DOI: http://doi.org/10.1007/BF02817348
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TypeArticle
Journal titleJournal of electronic materials
ISSN0361-5235
Volume22
IssueJuly 7
Pages739743; # of pages: 5
AbstractIn the photoluminescence (PL) spectra of Si1-xGex multi-quantum wells (MQW) grown by conventional solid source molecular beam epitaxy (MBE), phonon-resolved, near-bandgap transitions due to shallow dopant bound exciton or free exciton recombination were observed when the well thickness was less than 40 100Å, depending on x. Increasing the Si1-xGex well thickness caused the emergence of a broad, unresolved PL peak ˜120 meV lower in energy than the expected bandgap energy. Interstitial-type platelets, less than 15Å in diameter, were measured by plan view transmission microscopy to occur in densities that correlated well with the intensity of the broad PL peak. A platelet density of ˜108 cm-2 per well was sufficient to completely quench the phonon-resolved PL. Etching experiments revealed that within a given MQW, the platelet density is lowest in the first grown well and progressively increases in subsequent wells with increasing strain energy density, indicating that platelet formation is strictly a morphological phenomenon and suggesting that a strain relaxation mechanism is in effect before the onset of relaxation by misfit dislocation injection.
Publication date
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards; National Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
Identifier10060868
NRC number1160
NPARC number8898127
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Record identifierd8cb64e4-dd35-400b-8a83-9dc7906e9c17
Record created2009-04-22
Record modified2016-05-09
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