Effect of implantation dose on photoluminescence decay times in intermixed GaAs/AlGaAs quantum wells

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DOIResolve DOI: http://doi.org/10.1063/1.115875
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TypeArticle
Journal titleApplied Physics Letters
Volume68
Issue16
Pages22522254; # of pages: 3
SubjectALUMINIUM ARSENIDES; CARRIER LIFETIME; DEFECT STATES; GALLIUM ARSENIDES; ION IMPLANTATION; MIXING; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; QUANTUM WELLS
AbstractThe effect of ion implantation induced intermixing on the effective radiative lifetimes in GaAs/AlGaAs quantum wells is investigated using the technique of time-resolved photoluminescence (TRPL). Below the critical dose, the carrier lifetimes appear enhanced by the processing although no changes are discernible in the continuous wave photoluminescence (CWPL) spectra. Above the critical dose, carrier lifetimes are reduced by residual defects created in the intermixed wells by the implantation procedure. These observations demonstrate the greater sensitivity of TRPL over CWPL in detecting residual damage produced by processing quantum well material.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328040
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Record identifierd9fad6af-c48c-4b06-a946-b2df9de07918
Record created2009-09-10
Record modified2016-05-09
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