High-energy ion implantation for electrical isolation of InP-based materials and devices

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DOIResolve DOI: http://doi.org/10.1016/0168-583X(94)00510-9
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TypeArticle
Journal titleNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume96
Issue1-2
Pages323326; # of pages: 4
AbstractThe application of high-energy ion implantation for electrical isolation of InP-based materials and devices is described and damage- and chemically-related compensation mechanisms are compared. The former is shown to result in excessive dark current in InGaAs/InP p-i-n photodiodes due to the low intrinsic resistivity of InGaAs and the presence of residual disorder. While chemically-related compensation minimizes residual disorder, the application of this technology is often limited by diffusion and/or the low solid solubility of the deep dopant as demonstrated in both Fe- and Au-implanted InP.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12330165
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Record identifierda34a606-ef33-43bd-a76a-1107c8d9fdc6
Record created2009-09-10
Record modified2016-05-09
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