State filling and time-resolved photoluminescence of excited states in InxGa1-xAs/GaAs self-assembled quantum dots

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.54.11548
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TypeArticle
Journal titlePhys. Rev. B
Physical Review B
Volume54
Issue16
Pages11548–; # of pages: 1
AbstractWe present radiative lifetime measurements of excited states in semiconductor self-assembled quantum dots. By increasing the photoexcitation intensity, excited-state interband transitions up to n=5 can be observed in photoluminescence. The dynamics of the interband transitions and the intersublevel relaxation in these zero-dimensional energy levels lead to state filling of the lower-energy states, allowing the Fermi level to be raised by more than 200 meV due to the combined large intersublevel spacing and the low density of states. The decay time of each energy level obtained under various excitation conditions is used to evaluate the intersublevel thermalization time. � 1996 The American Physical Society.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328007
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Record identifierda3d66d1-e337-4104-b0c8-6dfd6262d29c
Record created2009-09-10
Record modified2016-05-09
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