Photoreflectance of InSb/GaAs heterostructures at E₁ and E₁ +Δ₁ transitions

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DOIResolve DOI: http://doi.org/10.1049/el:19940822
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TypeArticle
Journal titleElectronics Letters
Volume30
Issue15
Pages12501251; # of pages: 2
Subjectcrystal quality; film thickness; InSb/GaAs heterostructures; lattice-mismatched heterostructures; layer thickness; lineshape broadening; photoreflectance spectra; structural quality
AbstractThe photoreflectance spectra of InSb/GaAs heterostructures at the E₁ and E₁ +Δ₁ transitions have been measured as a function of layer thickness. The spectra show an increase in lineshape broadening, similar to that observed in the increase in FWHM of the X-ray diffraction peaks, as the film thickness decreases. The data indicate increased crystal quality with increasing layer thickness. The results show that photoreflectance can be used as a tool to study the structural quality of lattice-mismatched heterostructures.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327109
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Record identifierda86c665-2091-4e74-9910-d4f4205bd9ec
Record created2009-09-10
Record modified2016-05-09
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