InGaN/GaN light emitting diodes with a p-down structure

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DOIResolve DOI: http://doi.org/10.1109/TED.2002.801277
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TypeArticle
Journal titleIEEE Transactions on Electron Devices
Volume49
Issue8
Pages13611366; # of pages: 6
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12328392
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Record identifierdac08e92-b76e-4f8c-806e-99401c0cb255
Record created2009-09-10
Record modified2016-05-09
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