Iridium single atom tips fabricated by field assisted reactive gas etching

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DOIResolve DOI: http://doi.org/10.1016/j.apsusc.2016.01.080
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TypeArticle
Journal titleApplied Surface Science
ISSN0169-4332
AbstractWe present a simple, reliable method to fabricate Ir single atom tips (SATs) from polycrystalline wire. An electrochemical etch in CaCl2 solution is followed by a field assisted reactive gas etch in vacuum at room temperature using oxygen as an etching gas and neon as an imaging gas. Once formed, SATs are cooled to liquid nitrogen temperatures and their underlying structure is examined through evaporation of the apex atoms. Furthermore, a method is developed to repair Ir SATs at liquid nitrogen temperatures when apex atoms evaporate. This method may be used to fabricate Ir SAT ion sources.
Publication date
LanguageEnglish
AffiliationNational Institute for Nanotechnology; National Research Council Canada
Peer reviewedYes
IdentifierS0169433216001173
NPARC number21277235
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Record identifierdb4b471f-ee9e-4877-8ed6-dd5e5e06d936
Record created2016-01-18
Record modified2016-05-09
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