Diameter-dependent electromechanical properties of GaN nanowires

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DOIResolve DOI: http://doi.org/10.1021/nl051860m
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TypeArticle
Journal titleNano Letters
ISSN1530-6984
Volume6
Issue2
Pages153158; # of pages: 6
AbstractThe diameter-dependent Young's modulus, E, and quality factor, Q, of GaN nanowires were measured using electromechanical resonance analysis in a transmission electron microscope. E is close to the theoretical bulk value (~300 GPa) for a large diameter nanowire (d = 84 nm) but is significantly smaller for smaller diameters. At room temperature, Q is as high as 2800 for d = 84 nm, significantly greater than what is obtained from micromachined Si resonators of comparable surface-to-volume ratio. This implies significant advantages of smooth-surfaced GaN nanowire resonators for nanoelectromechanical system (NEMS) applications. Two closely spaced resonances are observed and attributed to the low-symmetry triangular cross section of the nanowires.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; National Institute for Nanotechnology
Peer reviewedYes
Identifier19345410
NRC number10
NPARC number12328147
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Record identifierdc14a7b2-08a7-45f3-b865-b896d2a18b0c
Record created2009-09-10
Record modified2016-05-09
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