Demonstration of an ion-implanted, wavelength-shifted quantum-well laser

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DOIResolve DOI: http://doi.org/10.1109/68.475763
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TypeArticle
Journal titlePhotonics Technology Letters, IEEE
ISSN1041-1135
Volume8
Issue1
Pages1618; # of pages: 3
Subjectbandgap shifting; blue shift; broad-area laser; fabrication; III-V semiconductors; indium compounds; InP; ion implantation; optical fabrication; quantum well lasers; quantum-well laser; spectral line shift; threshold current; wafer integration; wavelength shifting
AbstractA technique for fabricating many different wavelength lasers on the same wafer has been developed. High energy ion implantation was used to selectively blue shift the emission wavelength of an InP-based quantum well laser structure. This structure was then processed into fully functional broad-area lasers whose current threshold was unaffected by the implantation process, indicating extremely high material quality after bandgap-shifting. This process has the potential for the integration of not only different wavelength lasers, but also other devices, such as waveguides, detectors, modulators, etc., on a single wafer.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
Identifier10456375
NPARC number12328778
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Record identifierdced8f91-23d5-45b9-8730-4fb7c3c339af
Record created2009-09-10
Record modified2016-05-09
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