Rolled-up 1.5 μm InAs quantum dot tube lasers and integrated nanophotonic circuits on Si

DOIResolve DOI: http://doi.org/10.1109/PHOSST.2013.6614486
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TypeArticle
Proceedings title2013 IEEE Photonics Society Summer Topical Meeting Series, PSSTMS 2013
Conference2013 IEEE Photonics Society Summer Topical Meeting Series, PSSTMS 2013, 8 July 2013 through 10 July 2013, Waikoloa, HI
ISBN9781467350600
Article number6614486
Pages3435; # of pages: 2
SubjectDirect integration; Electronic component; Emission wavelength; High performance lasers; InAs quantum dots; Nanophotonic circuits; Nanoscale lasers; Telecom wavelengths; Optical communication; Semiconducting silicon; Semiconductor quantum dots; Silicon; Tubes (components); Semiconductor lasers
AbstractLow threshold, ultrahigh speed micro- and nanoscale lasers that can be directly integrated with optoelectronic and electronic components on a CMOS chip are in demand for future chip-level optical communications. In this regard, rolled-up semiconductor tube optical cavities, formed when coherently strained nanomembranes are selectively released from the host substrate, have emerged as a promising approach to realize high performance lasers on Si. 1-3 We have investigated the design, fabrication, and characterization of InAs/InGaAsP quantum dot tube lasers. We report the first demonstration of semiconductor tube lasers that can operate at the telecom wavelength (∼ 1.5 μm). Such devices can exhibit an extremely low threshold (∼ 1.26 μW) and multiple emission wavelengths. The direct integration of quantum dot tube devices with Si waveguides has also been demonstrated. © 2013 IEEE.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21269577
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Record identifierddb5420b-6199-4fe1-b9f7-b1cb34e4e10e
Record created2013-12-13
Record modified2016-05-09
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