Extremely low threshold current density InGaAs/GaAs/AlGaAs strained SQW laser grown by MBE with As2

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DOIResolve DOI: http://doi.org/10.1139/p96-820
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TypeArticle
Journal titleCanadian Journal of Physics
ISSN00084204
Volume74
Issue12
PagesS1S4; # of pages: 4
AbstractIn this report, we present data on an InGaAs/GaAs strained single quantum well laser with the lowest reported threshold current density to date, namely 44 A cm−2 for a 3 mm cavity length. This was grown by solid-source molecular-beam epitaxy with the arsenic dimer, As2. The structure is that of a graded-index, separate-confinement heterostructure with a single strained InGaAs quantum well, sandwiched between GaAs barrier layers and AlGaAs cladding layers. The wavelength of the lasers was around 985 nm, and the internal efficiency and losses were 69% and 0.70 cm−1, respectively. In addition, data on the uniformity of our lasers, which are grown on rotating 2 in substrates (1 in = 2.54 cm), show drops in photoluminescence emission wavelength and layer thickness of less than 4 nm and 4%, respectively, from the centre to the edge of the wafer and very little compositional change.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
Identifier10007027
NPARC number12339007
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Record identifierdde76568-fd1c-454c-b80b-0319100b4807
Record created2009-09-11
Record modified2016-05-09
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