Evidence from electrical transport and photoluminescence spectroscopy of a band of localized deep donors in high-purity n-type InP grown by chemical-beam epitaxy

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.50.16964
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TypeArticle
Journal titlePhys. Rev. B
Physical Review B
Volume50
Issue23
Pages16964–; # of pages: 1
AbstractWe have measured the Hall mobility and Hall electronic concentration as a function of temperature of three low-compensation n-type InP epilayers of similar thickness grown by chemical-beam epitaxy. The Hall mobility of the samples was found to be exceptionally high at 77 K and significantly depressed at 300 K. Above the freeze-out region, strong Hall electronic excitation was consistently observed in the temperature range of ?35�300 K. These features are in excellent agreement with a model accounting for a broad band of localized deep-donor centers or complexes of unknown origin, centered at 160 meV below the conduction band. In addition, all samples showed an anomalous metal-like behavior at the lowest temperatures, instead of the expected strong localization regime. A broad luminescent band of ?11-meV linewidth linked to the presence of the band of deep donors was observed below the acceptor bound-exciton transition. Time-resolved photoluminescence and photoluminescence-excitation measurements supported the bound-exciton nature of the luminescent band.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12338540
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Record identifierde297275-d581-4e95-b558-02d5dfba2a77
Record created2009-09-10
Record modified2016-05-09
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