Electronic structure of wide-band-gap (AlN)m (GaN)m[001] superlattices

  1. Get@NRC: Electronic structure of wide-band-gap (AlN)m (GaN)m[001] superlattices (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1557/PROC-395-473
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Proceedings title1995 MRS Fall Meeting - Symposium AAA – Gallium Nitride and Related Materials: The First International Symp
Series titleMaterials Research Society Symposia Proceedings; no. 395
Conference1995 MRS Fall Meeting: Symposium AAA: Gallium Nitride and Related Materials: the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.
Pages473–; # of pages: 1
AbstractWide bandgap III-V nitrides, such as GaN and AlN, have become topical in the near-term technology of blue lasers. We report detailed electronic band-structure calculations for (AlN)m(GaN)n [001] zinc-blende superlattices (SL), with m + n ≤ 12, using the all-electron full-potential linear-muffin-tin-orbital method. For n ≥ 3, the SL are found to have a direct band gap. For n ≤ 2 and m ≥ 3, all the band gaps are indirect. In ultrathin SL, m ≤ 3 and n ≤ 2, only (m, n)= (3,1) is found to have an indirect gap. The band offsets are estimated by calculating the core-level shifts of nitrogen atoms in the central planes of the GaN and A1N layers. The calculated densities of states, electron- and hole- effective masses (m), etc., as a function of m and n, are reported; a remarkable dependence of m on the number of layers is revealed.
Publication date
PublisherCambridge University Press
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12327164
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Record identifierde511390-f6fc-4e48-bf4e-294393fc235f
Record created2009-09-10
Record modified2016-05-09
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