Structural and optical properties of Si/Ge nanowire heterojunctions

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DOIResolve DOI: http://doi.org/10.1149/05301.0215ecst
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TypeArticle
Proceedings titleECS Transactions
Conference5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting, 12 May 2013 through 17 May 2013, Toronto, ON
ISSN1938-5862
ISBN9781607683742
Volume53
Issue1
Pages215224; # of pages: 10
SubjectAxial heterojunctions; Chemical compositions; Lateral expansion; Lattice-mismatched; Partial amorphization; Structural and optical properties; Structural defect; Vapor-liquid-solid techniques; Germanium; Graphene; Heterojunctions; Semiconductor quantum wells; Thermal expansion; Transmission electron microscopy; Vapors; Nanowires
AbstractIn crystalline, dislocation-free, Si/Ge nanowire (NW) axial heterojunctions grown using the vapor-liquid-solid (VLS) technique, transmission electron microscopy (TEM) photoluminescence (PL) and Raman spectroscopy reveal a SiGe alloy transition layer with preferential chemical composition and strain. In addition to the lattice mismatch, strain due to the difference in Si and Ge thermal expansion is observed. We find, in agreement with theoretical predictions, that the strain can be partially relived by lateral nanowire expansion in the vicinity of the Si/Ge heteroj unction. In addition to the observed nanowire lateral expansion, the lattice mismatched induced strain could be relaxed by other mechanisms including intermixing, formation of structural defects and partial amorphization. The conclusions are supported by analytical TEM measurements. © The Electrochemical Society.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); Information and Communication Technologies; Measurement Science and Standards
Peer reviewedYes
NPARC number21269593
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Record identifierde52388a-c038-4653-ad1f-80439c21537e
Record created2013-12-13
Record modified2016-05-09
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