Understanding charge dynamics in silicon dangling bond structures for nanoscale devices

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Proceedings titleNanotechnology 2012: Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo. Volume 1: Advanced materials, CNTs, particles, films and composites
ConferenceNanotech Conference and Expo 2012, June 18-21, 2012, Santa Clara, CA, USA
Pages3537; # of pages: 3
SubjectArtificial molecule; Atomic scale; Building blockes; Charge dynamics; Charge qubits; Computing architecture; Device architectures; Electron dynamics; External control; Ionic state; Nanoscale device; Polarization properties; Quantum-dot cellular automata; Si(001) surfaces; Silicon dangling bonds; Silicon surfaces; Dynamics; Electronic structure; Fluidics; Molecules; Nanowires; Scanning tunneling microscopy; Sequential machines; Nanotechnology
AbstractA dangling bond (DB) on a silicon surface atomic has been found to behave as an atomic-scale quantum dot. This opens up the possibility of using DBs as building blocks for novel electronic structures, pushing the ultimate limits of nanoscale devices. Examples include: artificial molecules, nanowires, and alternate computing architectures such as the Quantum-Dot Cellular Automata (QCA). We study theoretically various aspects of DB structures on an H-terminated 2x1 Si(001) surface, which are of primary interest for the advancement of any device architecture: (i) The "diatomic" artificial DB molecule, composed of two tunnel-coupled DBs; its coherence and polarization properties in different ionic states; its potential as a charge qubit. (ii) The interaction of such DB structures with external control electrodes and manipulators, including the interaction with a scanning tunneling microscopy (STM) probe.
Publication date
AffiliationNational Research Council Canada (NRC-CNRC); Security and Disruptive Technologies
Peer reviewedYes
NPARC number21270288
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Record identifiere06a1785-d537-45cf-8018-bb881700683b
Record created2014-01-20
Record modified2016-05-09
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