Growth and characterization of Si/SiGe strained-layer superlattices on bulk single-crystal SiGe and Si substrates

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DOIResolve DOI: http://doi.org/10.1016/S0022-0248(03)01018-2
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TypeArticle
Journal titleJournal of Crystal Growth
ISSN0022-0248
Volume253
IssueJune
Pages7784; # of pages: 8
SubjectA3. superlattices; A3. chemical vapor deposition processes; B1. Germanium silicon alloys
AbstractShort-period Si/SiGe strained-layer superlattices have been grown on bulk single-crystal SiGe substrates using a commercial low-temperature ultrahigh vacuum chemical vapor deposition reactor. The same structures were simultaneously grown on Si substrates for comparison. The materials were characterized by high-resolution X-ray diffraction (HRXRD), Auger electron spectroscopy (AES), atomic force microscopy (AFM), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL). HRXRD, AES, and XTEM results show that the materials are high crystal-quality superlattice layers with abrupt interfaces as well as thickness and composition uniformity across superlattices of 5 periods. AFM images are consistent showing smooth surfaces with rms roughnesses much less than 1 nm for both the top layer and starting substrate surfaces. The low temperature PL spectra, which provide additional information about material quality and composition, show sharp, well-resolved near band-edge bound and free exciton lines and an intense broad sub-gap signal possibly related to superlattice transitions.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences; NRC Institute for National Measurement Standards
Peer reviewedNo
Identifier10137063
NRC number1086
NPARC number5764553
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Record identifiere118db86-e47d-41db-8b25-e790938198cc
Record created2009-03-29
Record modified2016-05-09
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