Surface Dipole Layer Potential Induced IR Absorption Enhancement in n-Alkanethiol SAMs on GaAs(100)

Download
  1. Get@NRC: Surface Dipole Layer Potential Induced IR Absorption Enhancement in n-Alkanethiol SAMs on GaAs(100) (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1021/la901888q
AuthorSearch for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleLangmuir
Volume25
Issue23
Pages1356113568; # of pages: 7
Subjectmonolayers; electrostatic properties; photoelectron; polirizability
AbstractThe work function of n-alkanethiol self-assembledmonolayers (SAMs) prepared on theGaAs(001) surface was measured using the Kelvin probe technique yielding the SAM 2D dipole layer potential (DLP). Direct n-dependent proportionality between the DLP values and the C-H stretching mode infrared (IR) absorption intensities was observed, which supports a correspondence of reported IR enhancements with the electrostatic properties of the interface. X-ray photoelectron spectroscopy is also used to verify the work function measurements. In addition, the principal components of the refractive index tensor are shown to be n-invariant in the ordered SAM phase. Our results suggest that a local field correction to the transition dipolemoment accounts for the observed increase in IRactivity through an increase to the electronic polarizability.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Chemical Process and Environmental Technology; NRC Steacie Institute for Molecular Sciences
Peer reviewedYes
NPARC number16093759
Export citationExport as RIS
Report a correctionReport a correction
Record identifiere2193703-ca6a-48df-a450-9124a326e640
Record created2010-09-27
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)