Mid- and near-infrared Si waveguides for sensing applications (conference presentation)

DOIResolve DOI: http://doi.org/10.1117/12.2267868
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TypePresentation
Proceedings titleProceedings Volume 10249, Integrated Photonics: Materials, Devices, and Applications IV
Series titleProceedings of SPIE; no. 10249
ConferenceSPIE Microtechnologies, 8-10 May 2017, Barcelona, Spain
Pages102490A
AbstractThe large transparency window of silicon (1.1 - 8 μm wavelength range) makes it a promising material for the implementation of on-chip sensors operating over an ultra-wide wavelength range. However, the implementation of the silicon-on-insulator platform is restricted by the absorption of buried oxide layer for wavelengths above 4 μm. Here, we report our advances in development of silicon waveguides for broadband operation extending from near- to mid-infrared wavelengths. We present suspended silicon waveguides that exploit a novel periodic corrugation approach to circumvent the buried oxide absorption problem and provide effective single mode operation simultaneously for near- and mid-infrared wavelengths.
Publication date
PublisherSPIE
LanguageEnglish
AffiliationNational Research Council Canada; Medical Devices
Peer reviewedYes
NPARC number23002297
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Record identifiere26a94ae-38ae-4b36-bc58-7f5bae3b7190
Record created2017-10-12
Record modified2017-10-12
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