Process dependence of the SiO[sub 2]/Si(100) interface structure

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DOIResolve DOI: http://doi.org/10.1063/1.359494
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TypeArticle
Journal titleJournal of Applied Physics
Volume77
Issue8
Pages41104112; # of pages: 3
SubjectANNEALING; FILM GROWTH; INTERFACES; PHOTOELECTRON SPECTROSCOPY; RELAXATION; SILICON; SILICON OXIDES; STRAINS; SYNCHROTRON RADIATION
AbstractSynchrotron radiation photoemission spectroscopy has been used to study thermal SiO2/Si(100) interfaces. Oxides were grown at 700 °C and were then post‐annealed at higher temperatures. Various Si oxidation states Si+x (x represents the oxidation state) at the interface were detected from Si 2p core level measurements. The results show that the amount of both Si+3 and Si+2 increases while that of Si+1 remains constant as a function of anneal temperature. It is also found that the peak width of the substrate Si 2p increases with increasing anneal temperature. This is attributed to the disordering of substrate Si atoms adjacent to the interface. The above results are interpreted in terms of anneal‐induced structural relaxation to reduce the long‐range strain on both sides of the interface.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12337927
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Record identifiere3079d7d-3e3c-4aa1-be09-1afc3d7bf8ca
Record created2009-09-10
Record modified2016-05-09
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