Radiative and non-radiative recombination times in a single quantum well with self-assembled islands

DOIResolve DOI: http://doi.org/10.1016/0039-6028(96)00539-0
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Proceedings titleProceedings of the Eleventh International Conference on the Electronic Properties of Two-Dimensional Systems
Series titleSurface Science; Volume 361-362
Conference11th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS XI), Nottingham, UK, August 7-11, 1995
Pages810813; # of pages: 4
SubjectIndium arsenide; Photoluminescence; Quantum wells; Semiconductor-semiconductor heterostructures; Semiconductor-Semiconductor interfaces; Semi-empirical models and model calculations; Sum frequency generation; Surface roughening
AbstractWe present an investigation of the exciton dynamics in a single quantum well with self-assembled islands. We combine continuous-wave and time-resolved luminescence measurements as a function of the temperature to obtain quantitative information on the recombination processes in the well. The obtained radiative recombination times indicate that excitons are localized at low temperatures. We also discuss the evidences of inter-island transferring of excitons.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12329074
Export citationExport as RIS
Report a correctionReport a correction
Record identifiere3484077-3b91-427a-b75a-555df424dc61
Record created2009-09-10
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)