Synchrotron radiation studies of platinum silicide thin films

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DOIResolve DOI: http://doi.org/10.1557/PROC-402-587
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Proceedings titleSilicide thin films--fabrication, properties, and application : symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A.
Series titleMaterials Research Society symposia proceedings; no. 402
Conference1995 MRS Fall Meeting: Symposium H: Silicide Thin Films-Fabrication, Properties and Applications, November 27-30, 1995, Boston, Massachusetts, U.S.A.
ISSN0272-9172
ISBN1558993053
978-1558993051
Pages587592; # of pages: 6
AbstractPtSi thin films prepared by UHV sputter-deposition procedures on n-type Si(100) wafers have been studied with the following techniques: (a) X-ray absorption fine structure spectroscopy at the Si K-edge, Si L2,3-edge, and Pt L3-edge; (b) X-ray reflectivity at photon energies below and above the Pt L3-edge threshold and (c) Photoemission. These techniques provide valuable information about the electronic structure, morphology, local structure, thickness, density and roughness, and surface and interface properties of the films. Preliminary results from the application of these techniques to the study of several PtSi thin films (with thickness from several hundreds to thousands of Å) are reported.
Publication date
PublisherCambridge University Press
AffiliationNational Research Council Canada; Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12329050
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Record identifiere3a93dd0-5eb1-4b00-a389-034d192aeea9
Record created2009-09-10
Record modified2016-05-09
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