Rapid thermal processing of buried Si[1-x]Ge[x]/Si strained layers: photoluminescence decay and misfit dislocation generation

AuthorSearch for: ; Search for:
TypeArticle
ConferenceEpitaxial heterostructures : symposium, April 16-19, 1990, San Francisco, California, USA
ISSN0272-9172
ISBN1558990879
Pages509514; # of pages: 6
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards
Peer reviewedNo
NRC number1194
NPARC number8898469
Export citationExport as RIS
Report a correctionReport a correction
Record identifiere3e88a1d-786e-4380-9436-03f9b6786b07
Record created2009-04-22
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)