Linewidth enhancement factor of InAs/InP quantum dot lasers around 1.5 μm

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DOIResolve DOI: http://doi.org/10.1016/j.optcom.2012.07.002
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TypeArticle
Journal titleOptics Communications
ISSN0030-4018
Volume285
Issue21-22
Pages43724375; # of pages: 4
SubjectInAs/InP quantum dot lasers; linewidth enhancement factor; injection locking technique; Hakki–Paoli method
AbstractLinewidth enhancement factor (LEF) of InAs/InP quantum dot (QD) multi-wavelength lasers (MWLs) emitting around 1.5 μm is investigated both above and below the threshold. Above the threshold, LEFs at three different wavelengths around the gain peak of 1.53 μm by the injection locking technique are obtained to be 1.63, 1.37 and 1.59. Then by Hakki–Paoli method LEF is found to decrease with increased current and shows a value of less than 1 below the threshold. These small LEF values have clearly indicated that our developed InAs/InP QDs are perfect and promising gain materials for QD MWLs, QD mode-locked lasers (QD MLLs) and QD distributed-feedback (QD DFB) lasers around 1.5 μm.
Publication date
PublisherElsevier
LanguageEnglish
AffiliationInformation and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number21268057
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Record identifiere424ba2f-a8cf-4a98-8a66-be51cf427f59
Record created2013-04-05
Record modified2016-05-09
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