Silicon Nitride and Silicon Dioxide Thin Insulating Films (Sixth International Symposium)

EditorSearch for: Sundaram, K. B.; Search for: Deen, M. J.; Search for: Landheer, D.; Search for: Brown, W. D.; Search for: Misra, D.; Search for: Allendorf, M. D.; Search for: Sah, R. E.
Series titleProceedings (Electrochemical Society); Volume 2001-7
Conference6th Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, 2001, Washington, D.C., USA
Physical description286 p.
AbstractA multitude of topics are discussed in this volume, such as film preparation, film and substrate interface analysis by novel techniques, as well as passivation, charge transport, and trapping. Also covered are tunneling phenomena and dielectric breakdown, defects, and impurities. Included as well are electrical, physical, chemical, and optical properties and multilayer dielectric layers, stacks, and interfaces. In addition, this volume discusses plasma processing, rapid thermal process oxidation, nitridation, isolation techniques, and radiation effects.
Publication date
PublisherElectrochemical Society
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12346631
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Record identifiere493d3d9-4afe-4f71-81a5-9b561d97f90a
Record created2009-09-17
Record modified2016-05-09
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