Short wavelength (1–4μm) infrared detectors using intersubband transitions in GaAs-based quantum wells

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DOIResolve DOI: http://doi.org/10.1063/1.367488
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TypeArticle
Journal titleJournal Of Applied Physics
Volume83
Issue11
Pages61786181; # of pages: 4
Subjectaluminium compounds; dark conductivity; gallium arsenide; III-V semiconductors; indium compounds; infrared detectors; interface states; photoconductivity; photodetectors; semiconductor quantum wells
AbstractWe explore the possibility of covering the short wavelength infrared region using intersubband transitions in GaAs-based quantum wells. We investigate InGaAs wells with AlAs thin confining barriers. For this type of double-barrier resonant-final-state detectors, the dark current decreases with increasing detection wavelength. Photocurrents due to intersubband transition are observed down to a wavelength of about 1μm. The spectra also reveal interesting physical effects apparently related to the indirect band minima at the X point. The responsivity for the 3–4μmm detectors reaches up to 0.01 A/W; and the background limited temperature is in the range of 80–100 K.
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AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327856
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Record identifiere512c4b6-8b69-4b6c-bcdc-e4fc2f018b2d
Record created2009-09-10
Record modified2016-05-09
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