Chemical beam epitaxy grown 1.5µm lasers using compressively strained InGaAsP quantum wells

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TypeArticle
Proceedings titleCanadian Journal of Physics
ConferenceSeventh Canadian Semiconductor Technology Conference, August 1995, Ottawa, Canada
Volume74
Issuesuppl.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328421
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Record identifiere532fa70-4177-4e4f-b7d3-95c1b0ff0ec8
Record created2009-09-10
Record modified2016-05-09
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