A Self-Directed Growth Process for Creating Covalently Bonded Molecular Assemblies on the H-Si(100)-3×1 Surface

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DOIResolve DOI: http://doi.org/10.1021/nl049796gS1530-6984(04)09796-6
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TypeArticle
Journal titleNano letters
ISSN15306984
Volume4
Issue5
Pages979983; # of pages: 5
AbstractA chain reaction initiated at a dangling bond on a H-terminated Si(100)-3?1 surface leads to the creation of contiguous, linear multimolecular assemblies. In contrast to a similar growth process observed on the H-Si(100)-2?1 surface, the linear structures grow in the cross-row direction, rather than parallel to dimer rows. This process is enabled by both an uncommonly high rate of H atom diffusion, specifically in the cross-row direction, and a low barrier to H atom abstraction from dihydride sites. These results demonstrate that anisotropy inherent to the substrate can be imposed upon molecular assemblies formed via this "self-directed" growth process.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences; National Institute for Nanotechnology
Peer reviewedNo
Identifier19345410
NPARC number12338016
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Record identifiere54dcc74-d0d1-43d0-bdc2-0a8cda951dc4
Record created2009-09-10
Record modified2016-05-09
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