Scanning voltage microscopy on active semiconductor lasers: the impact of doping profile near an epitaxial growth interface on series resistance

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DOIResolve DOI: http://doi.org/10.1109/JQE.2004.828262
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TypeArticle
Journal titleIEEE Journal of Quantum Electronics
Volume40
Issue6
Pages651655; # of pages: 5
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744366
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Record identifiere634714c-747e-4310-aa78-9876827457be
Record created2009-10-27
Record modified2016-05-09
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