Synthesis, characterization and applications of indolo[3,2-b]carbazole semiconductors

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DOIResolve DOI: http://doi.org/10.1021/ja071923y
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TypeArticle
Journal titleJournal of the American Chemical Society
Volume129
Issue29
Pages91259136; # of pages: 12
AbstractThe synthesis, characterization, and field-effect transistor (FET) properties of new indolo[3,2-b]carbazoles are described. In particular, an extensive characterization of their crystal structures has revealed the importance of the nature of the side chains (alkyl, phenyl, thienyl substituents) on their solid-state organization. These organic materials have exhibited p-type FET behavior with hold mobilities as high as 0.2 cm²V⁻¹s⁻¹ with an on/off current ratio higher than 10⁶. Best results were obtained with phenyl-substituted indolo[3,2-b]carbazoles since the presence of phenyl substituents seems to allow efficient overlap between the oligomeric molecules. More importantly, FET properties were kept constant during several months in air.
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LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744208
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Record identifiere7a53577-0d7a-4406-959f-6f0a9258acf5
Record created2009-10-27
Record modified2016-05-09
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