Zero- and low-magnetic-field transport characterization of AlxGa1-xAs/GaAs lateral dots

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.47.4458
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TypeArticle
Journal titlePhysical Review B
ISSN0163-1829
Volume47
Issue8
Pages44584463; # of pages: 6
AbstractThe use of surface gates to define submicrometer-size dots incorporating quantum point contacts (QPC's) is proving profitable in investigating a number of effects including single electron effects and geometry-induced quantum interference. In these studies, characterization of the dots is essential. We report zero- and low-magnetic-field analysis of ballistic transmission through these structures and discuss the trajectories' interaction with the confining potential profiles. We also consider the implications of the component QPC's for reciprocity. © 1993 The American Physical Society.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number21274636
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Record identifiere7c25270-4876-4c98-8bb0-a7d5075bad2c
Record created2015-03-18
Record modified2016-05-09
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