Visible luminescence from semiconductor quantum dots in large ensembles

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DOIResolve DOI: http://doi.org/10.1063/1.115175
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TypeArticle
Journal titleApplied Physics Letters
Volume67
Issue4
Pages521523; # of pages: 3
SubjectALUMINIUM ARSENIDES; DISTRIBUTION FUNCTIONS; HETEROSTRUCTURES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; PHOTOLUMINESCENCE; QUANTUM DOTS; SIZE EFFECT; TRANSMISSION ELECTRON MICROSCOPY
AbstractVisible luminescence has been obtained from ensembles of defect-free, InxAl(1 � x)As islands of ultrasmall dimensions embedded in AlyGa(1 � y)As cladding layers. These structures were grown by molecular beam epitaxy and studied with low-temperature photoluminescence (PL) and transmission electron microscopy. Visible luminescence is produced using various compositions of InxAl(1 � x)As/AlyGa(1 � y)As. Quantum dot size distributions, planar densities, dot heights, and wetting layer thicknesses are presented and correlated with the PL spectra.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328149
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Record identifiere8cdbe64-b98d-407d-b6f9-1f90ac9badb6
Record created2009-09-10
Record modified2016-05-09
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