Ultra-Violet Photoenhanced Wet Etching of GaN in K2S2O8 Solution

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DOIResolve DOI: http://doi.org/10.1063/1.1352684
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TypeArticle
Journal titleJournal of Applied Physics
Volume89
Issue7
Pages41424149; # of pages: 8
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12327650
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Record identifiere9349cd6-10ad-439a-aa82-b95c5cf63f2a
Record created2009-09-10
Record modified2016-05-09
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