A study of the temperature sensitivity of GaAs-(Al,Ga)As multiple quantum-well GRINSCH lasers

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DOIResolve DOI: http://doi.org/10.1109/2944.401201
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TypeArticle
Journal titleSelected Topics in Quantum Electronics, IEEE Journal of
ISSN1077-260X
Volume1
Issue2
Pages230233; # of pages: 4
Subjectaluminium compounds; diffusion; drift-diffusion equations; GaAs-(Al,Ga)As multiple quantum-well GRINSCH lasers; GaAs-AlGaAs; gallium arsenide; gradient index optics; GRINSCH; III-V semiconductors; laser theory; MQW lasers; multiple quantum-well; optimum number; quantum well lasers; quantum well number; semiconductor device models; sensitivity; temperature sensitivity; temperature-dependent factors; temperature-dependent model; well-number behavior
AbstractWe have measured the temperature sensitivity, T0, of GaAs-(Al,Ga)As, GRINSCH, multiple quantum-well (MQW) lasers with different numbers of quantum wells ranging from one to ten. Our data suggests that there is an optimum number of wells, namely five, where T 0 is highest. Using a temperature-dependent model based on drift-diffusion equations, we have systematically analyzed the temperature sensitivity of a MQW GaAs-(Al, Ga)As laser. The T0 versus well-number behavior observed experimentally is verified, and the important temperature-dependent factors are identified
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
Identifier10530319
NPARC number12327982
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Record identifiere9b506c7-7ffe-4fdc-b837-7c35685816ca
Record created2009-09-10
Record modified2016-05-09
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