Memristive devices for computing

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Journal titleNature Nanotechnology
Pages1324; # of pages: 12
Subjectanion; cation; copper; chemical interaction; electric field; electric potential; electrode; geometry; information processing device; ion transport; mathematical computing; performance; priority journal; review
AbstractMemristive devices are electrical resistance switches that can retain a state of internal resistance based on the history of applied voltage and current. These devices can store and process information, and offer several key performance characteristics that exceed conventional integrated circuit technology. An important class of memristive devices are two-terminal resistance switches based on ionic motion, which are built from a simple conductor/insulator/conductor thin-film stack. These devices were originally conceived in the late 1960s and recent progress has led to fast, low-energy, high-endurance devices that can be scaled down to less than 10 nm and stacked in three dimensions. However, the underlying device mechanisms remain unclear, which is a significant barrier to their widespread application. Here, we review recent progress in the development and understanding of memristive devices. We also examine the performance requirements for computing with memristive devices and detail how the outstanding challenges could be met. © 2013 Macmillan Publishers Limited. All rights reserved.
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AffiliationNational Research Council Canada (NRC-CNRC)
Peer reviewedYes
NPARC number21270665
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Record identifierea8b8609-a986-4e5d-8d19-53bc566d1d92
Record created2014-02-17
Record modified2016-05-09
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