Local microstructures of Si in GaN studied by x-ray absorption spectroscopy

Download
  1. Get@NRC: Local microstructures of Si in GaN studied by x-ray absorption spectroscopy (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1063/1.124439
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleApplied Physics Letters
Volume75
Issue4
Pages534536; # of pages: 3
Subjectdoping profiles; gallium compounds; III-V semiconductors; semiconductor doping; silicon; wide band gap semiconductors; X-ray absorption spectra
AbstractSi K-edge x-ray absorption spectroscopy (XAFS) has been used to study the local structure of Si dopant in GaN crystalline material. Doping concentrations NSi from 8.0 � 1016 to 4.4 � 1019 cm � 3 were investigated. It is observed that the near-edge spectra vary significantly as a function of NSi. At low concentrations the Si K-edge spectra exhibit features similar to that obtained from N K-edge measurement, while at high concentrations the near-edge spectra shape is similar to that recorded from Si3N4. We interpret the results as an indication that Si is not randomly distributed. The changes of the near-edge spectra as a function of doping level is explained as due to changes in the magnitude of Si local lattice contraction caused by the formation of various types of Si clusters. The interpretation is further supported by extended XAFS spectra analysis. A Si-induced strain-field near the surface is proposed as the main force for the cluster formation during epitaxial growth.
Publication date
AffiliationNational Research Council Canada; NRC Steacie Institute for Molecular Sciences; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12332905
Export citationExport as RIS
Report a correctionReport a correction
Record identifiereba24787-0fb8-471d-a94a-23d863170f52
Record created2009-09-10
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)