Modified Stranski-Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition

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DOIResolve DOI: http://doi.org/10.1088/0957-4484/23/6/065603
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TypeArticle
Journal titleNanotechnology
ISSN0957-4484
Volume23
Issue6
Article number65603
SubjectDifferent substrates; Elemental compositions; Growth behaviour; Growth morphology; Kinetic control; Laser repetition rate; Morphological evolution; Nanostenciling; Repetition rate; Si(1 0 0); Si/Ge; Stranski-Krastanov growth; Stranski-Krastanov growth mode; Wetting layer; Atomic force microscopy; Atomic spectroscopy; Germanium; Programmable logic controllers; Pulse repetition rate; Pulsed laser deposition; Raman spectroscopy; Scanning electron microscopy; Pulsed lasers
AbstractThe combination of nanostenciling with pulsed laser deposition (PLD) provides a flexible, fast approach for patterning the growth of Ge on Si. Within each stencilled site, the morphological evolution of the Ge structures with deposition follows a modified StranskiKrastanov (SK) growth mode. By systematically varying the PLD parameters (laser repetition rate and number of pulses) on two different substrate orientations (111 and 100), we have observed corresponding changes in growth morphology, strain and elemental composition using scanning electron microscopy, atomic force microscopy and -Raman spectroscopy. The growth behaviour is well predicted within a classical SK scheme, although the Si(100) growth exhibits significant relaxation and ripening with increasing coverage. Other novel aspects of the growth include the increased thickness of the wetting layer and the kinetic control of Si/Ge intermixing via the PLD repetition rate. © 2012 IOP Publishing Ltd.
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LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC)
Peer reviewedYes
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This is a non-NRC publication

"Non-NRC publications" are publications authored by NRC employees prior to their employment by NRC.

NPARC number21270273
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Record identifierec1bdbf3-5edd-414f-a207-fd86cc7bacac
Record created2014-01-20
Record modified2016-05-09
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