Strong field processes inside gallium arsenide

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DOIResolve DOI: http://doi.org/10.1088/0953-4075/47/20/204025
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TypeArticle
Journal titleJournal of Physics B: Atomic, Molecular and Optical Physics
ISSN0953-4075
Volume47
Issue20
Article number204025
SubjectSemiconductor materials; GaAs; Strong field; Ultra-fast; Ionization
AbstractWe demonstrated experimentally that the multiphoton ionization rate in gallium arsenide depends on the alignment of the laser polarization with respect to the crystal axis. We observed modulation in the ionization rate of a linearly-polarized 1900 nm laser beam directly by measuring its transmission while rotating the crystal, without Fourier analysis. We propose that the modulation in the ionization rate arises from periodic variation in the reduced carrier mass, as predicted by Keldysh theory. We show direct comparison of the experimental transmission modulation depth with Keldyshs non-resonant ionization theory for solids. This opens up a novel method for non-invasive crystallography of semiconductor materials. © 2014 IOP Publishing Ltd.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; Security and Disruptive Technologies
Peer reviewedYes
NPARC number21276153
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Record identifieree388b42-4349-4e7e-bee8-7a9290f5b33a
Record created2015-09-28
Record modified2016-05-09
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